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Wednesday, May 13, 2020 | History

3 edition of Ion beam sputter deposited zinc telluride films found in the catalog.

Ion beam sputter deposited zinc telluride films

Ion beam sputter deposited zinc telluride films

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  • 8 Currently reading

Published by National Aeronautics and Space Administration, For sale by the National Technical Information Service in [Washington, DC], [Springfield, Va .
Written in English

    Subjects:
  • Amorphous semiconductors.,
  • Zinc telluride.,
  • Thin films.

  • Edition Notes

    StatementDaniel A. Gulino.
    SeriesNASA technical memorandum -- 87119.
    ContributionsUnited States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL15286314M

    E-beam Evaporation of Silicon (Si (P-type)) Silicon is rated as fair for e-beam evaporation. We refer to a material's evaporation temperature as the temperature required to achieve a vapor pressure of Torr. At this vapor pressure, a high deposition rate is possible in a system that has a normal source-to-substrate geometry.   The conventional wisdom to guarantee high purity thin films in IBSD has been to use a large vacuum chamber usually in excess of 1 m chamber size was important to minimise the effect of reflected high energy particles from the target surface sputtering chamber materials onto the substrate and to allow the use of large targets to avoid beam overspill onto chamber : David I. C. Pearson, Sebastien Pochon, Mike Cooke.

    Ion Beam Sputtering Definition. Ion beam sputtering (IBS), or ion beam deposition (IBD), is a thin film deposition technology that uses an ion source to deposit a sputtering target onto a substrate to produce the highest quality films with excellent precision. Compared to other PVD technologies, ion beam sputtering is more accurate and can accurately control the thickness of the substrate. About Zinc Telluride Sputtering Target American Elements specializes in producing high purity Zinc Telluride Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.

    Technical specifications of Zinc Telluride (ZnTe) Sputtering Targets and ordering information is available. Below you may find budgetary pricing for sputtering targets and deposition materials per your requirements. Actual prices may vary due to market fluctuations. Contact This email address is being protected from spambots. Material is deposited onto and implanted into a substrate by directing a beam of ions against a target, comprised of the material to be deposited, so as to sputter neutral particles and ionized particles from the target towards the substrate. The ionized particles are accelerated to energies sufficient to penetrate the substrate and be implanted therein and provide a strong by:


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Ion beam sputter deposited zinc telluride films Download PDF EPUB FB2

Zinc telluride films to A thick) deposited by ion beam sputter deposition appeared smooth, shiny, and translucent with a dark amber color. These as-deposited films did not spa'l, crack. This paper describes some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition.

Films (up to Å thick) were deposited from a ZnTe target. A beam energy of eV and a current density of 4 mA/cm 2 resulted in deposition rates of approximately 70 Å/min. X‐ray data were featureless for thinner films ( Å), giving no evidence of by: Get this from a library.

Ion beam sputter deposited zinc telluride films. [Daniel A Gulino; United States. National Aeronautics and Space Administration.]. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described.

Films (up to angstroms thick) were deposited from a ZnTe target. A beam energy of eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/ by: AIREX: Ion beam sputter deposited zinc telluride films Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful by: Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described.

Films (up to angstroms thick) were deposited from a ZnTe target. A beam energy of eV and a current density of 4 mA/sq. resulted in deposition rates of approximately 70 angstroms/: D.

Gulino. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described.

Films (up to angstroms thick) were deposited from a ZnTe target. A beam energy of eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/: D.

Gulino. Buy Ion beam sputter deposited zinc telluride films (SuDoc NAS ) by Daniel A. Gulino (ISBN:) from Amazon's Book Store. Everyday low prices and free delivery on eligible : Daniel A.

Gulino. Ion beam sputter deposition (IBSD) is a physical vapor d There is an increasing demand for thin films with tailored properties, which requires the use and control of adequate deposition techniques. Ion beam sputter deposition (IBSD) is a physical vapor d There is an increasing demand for thin films with tailored properties, which requires the use and control of adequate deposition Cited by: 6.

Study of ZnTe thin films deposited by r.f. sputtering Article in Thin Solid Films () February with Reads How we measure 'reads'. An ion beam sputtering system was used for the deposition of indium-tin-oxide (ITO) films at low temperatures (below °C).

The electrical and optical properties and the microstructure were highly dependent on the growth temperature, the oxygen partial pressure and the ion beam by:   Epitaxial films of Zinc telluride are deposited by rf sputtering on the clean surface of GaAs(), InP() and GaSb() substrates, which have lattice mismatches with ZnTe ofand %, respectively.

Ion-channeling measurements are carried out to evaluate the crystalline quality of the ZnTe by: 9. A dual ion beam sputtering system was used to deposit films of AlF 3, LaF 3 and GdF 3. Only the main deposition ion beam was used in this work.

The assisting ion source was not used. Xe sputtering gas was used with beam voltages and beam currents in the V and mA range, respectively. Sputtering with ion beam results in a. SiO x films prepared by sputtering by 1 keV Ar ion beam from a Si target and assisted by a second Ar + O 2 ion beam [58] revealed a dense amorphous nature when oxygen content is 20% and presented an oxygen transmission rate lower than that obtained by CVD and e-beam processes.

View chapter Purchase book. The ZnTe chalcogenide thin films were fabricated using an RF magnetron sputtering system and deposited using a ZnTe compound single target. We used high-purity Ar (5 N) to deposit a ZnTe thin film on a patterned tungsten substrate at a base pressure of 10 −7 Torr. The process pressure during the deposition was 10 −3 Torr, while the substrate temperature was maintained at by: 1.

Ion Beam Sputtering produces extremely smooth films as compared to electron beam deposition and/or ion assist. Due to the high energy of sputtered atoms, Ion Beam Sputtered films have a high density very similar to the bulk density of the target materials used.

This high density is consistently reproducible run to run. Zinc telluride films to A thick) deposited by ion beam sputter deposition appeared smooth, shiny, and translucent with a dark amber color. These as-deposited films did not spa'l, crack, or show any other outward signs of stress or poor adhesion.

Reticle Ion Beam Sputter Deposition System The ion beam sputter deposition system creates precise optical films of the highest purity, density, and stability.

Angstrom Engineering’s Reticle system provides a turn-key solution for those looking to realize any optical design into a high-performance film. Zinc telluride is deposited by rf sputtering on the clean surface of well lattice‐matched GaSb() substrates (with mismatch about %).

The surface native oxides have been etched off by H2 plasma treatment at substrate temperatures of more than °C. Reflection high‐energy electron diffraction patterns of ZnTe films prepared at °C are streaked with () characteristics, which Cited by: 3.

Ion Assisted Deposition (IAD) View IAD Model or Click on image below: IAD is a variant of the electron-beam evaporation process which adds a high energy ion beam that is directed at the part to be coated.

These ions act almost like an atomic sized hammer, producing a higher film density than can be achieved with purely by evaporation alone. ECI produces thin-film coatings using a variety of different deposition methods, our most advanced deposition method is Ion Beam Sputtering (IBS).

Ion Beam Sputtering produces coatings that are very dense with low surface roughness. Another advantage of IBS thin-film coatings is that they exhibit superior thermal stability.Zinc Telluride Sputtering Target, Purity is %; Circular: Diameter = 1mm; Block: Length = g is recommended for these materials.

Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal material may require special ramp up and ramp down .The technology is intended for deposition of precision multi –layer coatings having high density and low roughness.

Films obtained by ion-beam sputtering method have absolute value of roughness Rpv = nm with mean square deviation Rms = nm.